A new generation of nonvolatile memory devices are being actively developed and researched. The MRAM test cell is manufactured by Scientific-Manufacturing Complex “Technological Centre.” A control measuring system (CMS) is developed and manufactured for research. The work presents an algorithm for operation of the CMS, which makes it possible to study the spin-tunnel magnetoresistive (STMR) elements of a nonvolatile magnetoresistive random-access memory (MRAM) test cell. The main investigated characteristics of the MRAM test cell are the currents at which the cell is magnetized. Methods for measuring the resistance in a changing magnetic field created by the buses and determining currents for the magnetization reversal of a STMR element are presented in this work. The recording current value of the STMR element for the row is 40 mA and for the column, it is 67 mA. The next stage of the study is writing and reading the STMR elements. The resistance of the STMR element with the “0” logic state is 6.8 kΩ and with the “1” logic state is 13.4 kΩ. The stability of the MRAM element is confirmed by performing switching operations while maintaining the levels of the logic states.